• Micro Electronic O2 Plasma Etching Plasma Cleaning Machine
  • Micro Electronic O2 Plasma Etching Plasma Cleaning Machine
  • Micro Electronic O2 Plasma Etching Plasma Cleaning Machine
  • Micro Electronic O2 Plasma Etching Plasma Cleaning Machine
  • Micro Electronic O2 Plasma Etching Plasma Cleaning Machine
  • Micro Electronic O2 Plasma Etching Plasma Cleaning Machine

Micro Electronic O2 Plasma Etching Plasma Cleaning Machine

After-sales Service: Engineer Go Oversea for Training
Warranty: 1 Year
Application: Industry, School, Lab, Institute
Customized: Customized
Certification: ISO
Structure: Vertical
Diamond Member Since 2010

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Manufacturer/Factory & Trading Company

Basic Info.

Model NO.
VPC42
Material
Steel
Power
380VAC 20A
Gas
Compressed Air CDA, 0.5MPa
Nitrogen
0.5MPa
Temperature Sensor
Us Omega
Single Cleaning Area
350 *350mm
15mm Layers
0kHz 2kw Intermediate Frequency
50mm Layers
13.56Hz 300W Radio Frequency
Size
85*170*96cm
Transport Package
Polywood Case
Trademark
Torch
Origin
Beijing
Production Capacity
50sets/Month

Product Description

Micro Electronic O2 Plasma Etching Plasma Cleaning Machine

Micro Electronic O2 Plasma Etching Plasma Cleaning MachineI. Equipment name, type number, origin and delivery date
1.1 Equipment name: Vacuum plasma cleaning machine
1.2 Model No.: VPC42
1.3 Origin (country, manufacturer): Beijing Torch SMT Incorporated Company
1.4 Delivery date: 4-8 weeks after the contract comes into effect
1.5 Mainly used for plasma surface treatment process in semiconductor enclosure fields such as silicon wafer, glass substrate, ceramic substrate, IC carrier plate, copper lead frame, large-size single-sided substrate power board, IGBT module, MEMS sensor with fixture, microwave device, filter, RF device, etc.

II. Main technical performance parameters:
2.1 volume of vacuum chamber: 42L
2.2 vacuum degree:
The maximum vacuum degree of VPC42 vacuum plasma cleaner is less than 2 Pa (mechanical dry pump 40L/Minute)
2.3 Effective cleaning area:
Single cleaning area: 350 *350mm
15 layers: 15mm interval: 40KHZ 2KW intermediate frequency (surface treatment)
5 layers: 50mm interval, 13.56HZ 300W radio frequency (volume processing, with water cooling)
2.4 Height of vacuum chamber:
Chamber height: 350mm (effective size)
2.5 Cleaning temperature:
Low temperature cleaning (below room temperature).
2.6 Cleaning frequency: 30-120s
2.7 Cleaning effect: the dyne value can reach 70. The water drop angle is 15 degrees, and it can be optimally controlled within 10 degrees(Workshop with air cleanliness at Class 100 dust-free can be cleaned within 4 hours)
2.8 Gas can be used:
Argon, nitrogen, oxygen, nitrogen hydrogen mixture, hydrogen and Carbon tetrafluoride, etc.
2.9 VPC42 vacuum plasma cleaning machine is equipped with software control system:
The software control system is easy to operate, it enables control equipment connecting, and various cleaning process curves can be set, and curves can be set, modify, store and select for use according to different processes; The software has its own analysis function, which can analyze the process curve. The software control system will automatically record the cleaning process data, temperature curve, time and alarm related data in real time to ensure the traceability of product cleaning process.


Micro Electronic O2 Plasma Etching Plasma Cleaning MachineMicro Electronic O2 Plasma Etching Plasma Cleaning Machine
Company Information
Micro Electronic O2 Plasma Etching Plasma Cleaning Machine
Micro Electronic O2 Plasma Etching Plasma Cleaning Machine
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Micro Electronic O2 Plasma Etching Plasma Cleaning MachineMicro Electronic O2 Plasma Etching Plasma Cleaning Machine
 

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