Vacuum Plasma Cleaner for Semiconductor IGBT Module Mems

• After-sales Service: Engineer Go Oversea for Training
• Warranty: 1 Year
• Application: Industry, School, Lab, Institute
• Model NO.: VPC3I
• Customized: Customized
• Certification: ISO
• Structure: Vertical
• Material: Steel
• Power: 380VAC 20A
• Gas: Compressed Air CDA, 0.5MPa
• Nitrogen: 0.5MPa
• Temperature Sensor: Us Omega
• Single Cleaning Area: 350 *350mm
• 15mm Layers: 0kHz 2kw Intermediate Frequency
• 50mm Layers: 13.56Hz 300W Radio Frequency
• Size: 85*170*96cm
• Transport Package: Polywood Case
• Trademark: Torch
• Origin: Beijing
• Production Capacity: 50sets/Month

Product Description

Vacuum Plasma Cleaner for semiconductor IGBT module MEMS

I. Equipment name, type number, origin and delivery date
1.1 Equipment name: Inline vacuum plasma cleaning machine
1.2 Model No.: VPC3i
1.3 Origin (country, manufacturer): Beijing Torch SMT Incorporated Company
1.4 Delivery date: 4-8 weeks after the contract comes into effect
1.5 Mainly used for plasma surface treatment process in semiconductor enclosure fields such as silicon wafer, glass substrate, ceramic substrate, IC carrier plate, copper lead frame, large-size single-sided substrate power board, IGBT module, MEMS sensor with fixture, microwave device, filter, RF device, etc.
II Main technical performance parameters:
2.1 volume of vacuum chamber: 3L
2.2 vacuum degree:
The maximum vacuum degree of VPC3i vacuum plasma cleaner is less than 10 Pa (mechanical dry pump 8L)
2.3 Effective cleaning area:
Single cleaning area: 350 * 100 * 85mm
Plasma frequency: 13.56hz 300W  RF (volume treatment, with water cooling)
2.4 Height of vacuum chamber:
Furnace height: 100mm (effective size)
2.5 Cleaning temperature:
Low temperature cleaning (below room temperature).
2.6 Cleaning frequency: 30-120s
2.7 Cleaning effect: the dyne value can reach 70. The water drop angle is 15 degrees, and it can be optimally controlled within 10 degrees(Workshop with air cleanliness at Class 100 dust-free can be cleaned within 4 hours)
2.8 Gas can be used:
Argon, nitrogen, oxygen, nitrogen hydrogen mixture, hydrogen and formic acid, etc.



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