Vacuum Plasma Processing for IGBT Mems Wafer Glass Ceramic Substrate

• After-sales Service: Engineer at Site
• Warranty: 1 Year
• Application: Semiconductor(IGBT, Mems, etc ) Process Cleaning
• Model NO.: VPC42
• Cleaning Media: Dry Cleaning
• Automation: Semi-automatic
• Cleaning Precision: Ultra-Precision Industrial Cleaning
• Control: PLC
• Principle: Physical Cleaning
• Certification: CE, RoHS
• Condition: New
• Customized: Customized
• Feature: Clean Thoroughly
• Value of Chamber: 42L
• Power: 300W
• Votage: 380VAC 20A
• Atmosphere: Nitrogen
• Nitrogen: 0.5MPa
• Temperature Sensor: Us Omega
• Single Cleaning Area: 350 *350mm
• Size: 85*170*96cm
• Transport Package: Polywood Case
• Specification: 350 *350mm*5 layers
• Trademark: Torch
• Origin: Beijing
• Production Capacity: 50sets/Month

Product Description

Vacuum Plasma Processing for IGBT MEMS Wafer glass ceramic substrate

I. Equipment name, type number, origin and delivery date
1.1 Equipment name: Vacuum plasma cleaning machine
1.2 Model No.: VPC42
1.3 Origin (country, manufacturer): Beijing Torch SMT Incorporated Company
1.4 Delivery date: 4-8 weeks after the contract comes into effect
1.5 Mainly used for plasma surface treatment process in semiconductor enclosure fields such as silicon wafer, glass substrate, ceramic substrate, IC carrier plate, copper lead frame, large-size single-sided substrate power board, IGBT module, MEMS sensor with fixture, microwave device, filter, RF device, etc.
II. Main technical performance parameters:
2.1 volume of vacuum chamber: 42L
2.2 vacuum degree:
The maximum vacuum degree of VPC42 vacuum plasma cleaner is less than 2 Pa (mechanical dry pump 40L/Minute)
2.3 Effective cleaning area:
Single cleaning area: 350 *350mm
15 layers: 15mm interval: 40KHZ 2KW intermediate frequency (surface treatment)
5 layers: 50mm interval, 13.56HZ 300W radio frequency (volume processing, with water cooling)
2.4 Height of vacuum chamber:
Chamber height: 350mm (effective size)
2.5 Cleaning temperature:
Low temperature cleaning (below room temperature).
2.6 Cleaning frequency: 30-120s
2.7 Cleaning effect: the dyne value can reach 70. The water drop angle is 15 degrees, and it can be optimally controlled within 10 degrees(Workshop with air cleanliness at Class 100 dust-free can be cleaned within 4 hours)
2.8 Gas can be used:
Argon, nitrogen, oxygen, nitrogen hydrogen mixture, hydrogen and Carbon tetrafluoride, etc.
2.9 VPC42 vacuum plasma cleaning machine is equipped with software control system:
The software control system is easy to operate, it enables control equipment connecting, and various cleaning process curves can be set, and curves can be set, modify, store and select for use according to different processes; The software has its own analysis function, which can analyze the process curve. The software control system will automatically record the cleaning process data, temperature curve, time and alarm related data in real time to ensure the traceability of product cleaning process.


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